Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1992-06-01
1994-03-15
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257750, 257751, 257761, 257763, H01L 2348
Patent
active
052948340
ABSTRACT:
A method of enhancing the specific contact resistivity in InP semiconductor devices and improved devices produced thereby are disclosed. Low resistivity values are obtained by using gold ohmic contacts that contain small amounts of gallium or indium and by depositing a thin gold phosphide interlayer between the surface of the InP device and the ohmic contact. When both the thin interlayer and the gold-gallium or gold-indium contact metallizations are used, ultra low specific contact resistivities are achieved. Thermal stability with good contact resistivity is achieved by depositing a layer of refractory metal over the gold phosphide interlayer.
REFERENCES:
V. G. Weizer and N. S. Fatemi, Contact spreading and the Au.sub.3 In.sub.4 transition in the Au-InP System, J. Appl. Phys. 68(5, pp. 2275-2284 (1990).
N. S. Fatemi and V. G. Weizer, The Effect of Metal Surface Passivation on the AU-InP Interaction, J. Appl. Phys. 65(5), pp. 2111-2115 (1989).
N. S. Fatami and V. G. Weizer, The Kinetics of Au-InP Interaction, J. Appl. Phys. 67(4), pp. 1934-1939 (1990).
Fatemi Navid S.
Weizer Victor G.
Prenty Mark V.
Sverdrup Technology, Inc.
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