Low-resistance contact on a compound semiconductor

Details Low-resistance contact on a compound semiconductor Low-resistance contact on a compound semiconductor

1996-06-20

1998-09-08

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257764, 257770, H01L 2946, H01L 23485, H01L 23532

Patent

active

058048774

ABSTRACT:
Generally, and in one form of the invention, a method is disclosed for forming an ohmic contact on a GaAs surface 20 comprising the steps of depositing a layer of InGaAs 22 over the GaAs surface 20, and depositing a layer of TiW 24 on the layer of InGaAs 22, whereby a reliable and stable electrical contact is established to the GaAs surface 20 and whereby Ti does not generally react with the In.

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patent: 5569944 (1996-10-01), Delaney et al.

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