Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2009-03-25
2010-12-14
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE23011
Reexamination Certificate
active
07851923
ABSTRACT:
A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation in a substrate, the substrate having a frontside and an opposing backside; forming a first dielectric layer on the frontside of the substrate; forming a trench in the first dielectric layer, the trench aligned over and within a perimeter of the dielectric isolation and extending to the dielectric isolation; extending the trench formed in the first dielectric layer through the dielectric isolation and into the substrate to a depth less than a thickness of the substrate; filling the trench and co-planarizing a top surface of the trench with a top surface of the first dielectric layer to form an electrically conductive through via; and thinning the substrate from a backside of the substrate to expose the through via.
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Notice of Allowance (Mail Date Mar. 16, 2009) for U.S. Appl. No. 11/275,542, filed Jan. 13, 2006; Confirmation No. 1764.
Erturk Mete
Groves Robert A.
Johnson Jeffrey Bowman
Joseph Alvin Jose
Liu Qizhi
Cain David
International Business Machines - Corporation
Prenty Mark
Schmeiser Olsen & Watts
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