Low relative permittivity SiO x film including a porous...

Details Low relative permittivity SiO x film including a porous... Low relative permittivity SiO x film including a porous...

2007-01-16

2007-01-16

Fourson, George R. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S632000, C257S758000, C257SE23077, C257SE23167, C257SE21494, C438S632000, C438S787000

Reexamination Certificate

active

10258583

ABSTRACT:
A low relative permittivity SiOxfilm excellent in heat resistance without using an alkali metal, fluorine, etc., a method for modifying an SiOxfilm to accomplish a further reduction of the relative permittivity of the low relative permittivity SiOxfilm and further to increase the insulating property, a highly reliable semiconductor device free from crack or peeling of the film by employing the low relative permittivity SiOxfilm as an interlayer insulating film for metal wirings, are provided. The low relative permittivity film is characterized in that it is made of a porous material, the major constituent of which is SiOx(where 1.8≧X≧1.0), and the relative permittivity at 1 MHz is at most 2.3.

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