Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2007-01-16
2007-01-16
Fourson, George R. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S632000, C257S758000, C257SE23077, C257SE23167, C257SE21494, C438S632000, C438S787000
Reexamination Certificate
active
10258583
ABSTRACT:
A low relative permittivity SiOxfilm excellent in heat resistance without using an alkali metal, fluorine, etc., a method for modifying an SiOxfilm to accomplish a further reduction of the relative permittivity of the low relative permittivity SiOxfilm and further to increase the insulating property, a highly reliable semiconductor device free from crack or peeling of the film by employing the low relative permittivity SiOxfilm as an interlayer insulating film for metal wirings, are provided. The low relative permittivity film is characterized in that it is made of a porous material, the major constituent of which is SiOx(where 1.8≧X≧1.0), and the relative permittivity at 1 MHz is at most 2.3.
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Imamura Yasuo
Morisaki Hiroshi
Denki Kagaku Kogyo Kabushiki Kaisha
Fourson George R.
Maldonado Julio J.
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