Low pressure transducers employing large silicon diaphragms havi

Details Low pressure transducers employing large silicon diaphragms havi Low pressure transducers employing large silicon diaphragms havi

1976-05-05

1977-05-24

James, Andrew J.

Electrical resistors

Incased, embedded, or housed

Element in insulation with outer metallic sheath

357 73, 73 885SD, 338 4, 338 5, H01L 2984, H01L 2996, H01L 2330, B01B 716

Patent

active

040259420

ABSTRACT:
A low pressure transducer and methods of fabricating the same employ piezoresistive bridges deposited on or diffused within a wafer of n-type silicon, the wafer is secured to a glass sheet and is then bonded to a silicon diaphragm of a relatively large size and fabricated from a distinct piece of silicon of non-critical electrical characteristics. Methods for producing a plurality of such devices by using compatible processing steps are also provided.

REFERENCES:
patent: 3588632 (1971-06-01), Nakata
patent: 3739315 (1973-06-01), Kurtz et al.
patent: 3800264 (1974-03-01), Kurtz et al.
patent: 3868719 (1975-02-01), Kurtz et al.
patent: 3922705 (1975-11-01), Yerman

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