Low-pressure removal of photoresist and etch residue

Details Low-pressure removal of photoresist and etch residue Low-pressure removal of photoresist and etch residue

2008-03-18

2008-03-18

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S725000, C438S727000, C257SE21256

Reexamination Certificate

active

11032021

ABSTRACT:
A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluorocarbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

REFERENCES:
patent: 6551447 (2003-04-01), Savas et al.
patent: 2003/0054656 (2003-03-01), Soda
patent: 2003/0194876 (2003-10-01), Balasubramaniam et al.
patent: 2004/0104358 (2004-06-01), Moroz
patent: 2004/0171273 (2004-09-01), Oyama et al.
patent: 2006/0051947 (2006-03-01), Lin et al.

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