Low pressure plasma processing apparatus and method

Details Low pressure plasma processing apparatus and method Low pressure plasma processing apparatus and method

2005-09-27

2005-09-27

Barr, Michael (Department: 1746)

Coating apparatus

Gas or vapor deposition

Multizone chamber

C118S7230AN, C156S345320, C414S217000, C414S222010

Reexamination Certificate

active

06949144

ABSTRACT:
There are provided a low pressure plasma processing apparatus and method by which a throughput can be improved, film contamination can be effectively prevented, and a film can be readily managed. A film substrate is carried in from the outside of a plasma processing apparatus main body to a substrate carrying position in the plasma processing apparatus main body, the film substrate positioned at the substrate carrying position is carried into a chamber, a reaction gas is introduced while the chamber is being evacuated, high frequency power is applied under low pressure to generate plasma so that plasma processing is performed to remove organic matter from the film substrate, and the film substrate subjected to plasma processing is taken out from the chamber and positioned at a substrate carrying-out position in the plasma processing apparatus main body and carried out of the plasma processing apparatus main body.

REFERENCES:
patent: 5788868 (1998-08-01), Itaba et al.
patent: 5882413 (1999-03-01), Beaulieu et al.
patent: 6350321 (2002-02-01), Chan et al.
patent: 6467491 (2002-10-01), Sugiura et al.

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