Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material
Reexamination Certificate
2006-01-24
2006-01-24
Geyer, Scott (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
C438S685000
Reexamination Certificate
active
06989321
ABSTRACT:
A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.
REFERENCES:
patent: 4619840 (1986-10-01), Goldman et al.
patent: 5789312 (1998-08-01), Buchanan et al.
patent: 5853804 (1998-12-01), Hansen
patent: 6091122 (2000-07-01), Buchanan et al.
patent: 6218301 (2001-04-01), Yoon et al.
patent: 6491978 (2002-12-01), Kalyanam
patent: 6833161 (2004-12-01), Wang et al.
patent: 2002/0190379 (2002-12-01), Jian et al.
patent: 2003/0008070 (2003-01-01), Seutter et al.
Gomi Atsushi
Hatano Tatsuo
Kawano Yumiko
Leusink Gert J
Malhotra Sandra G.
Geyer Scott
International Business Machines - Corporation
Pillsbury Winthrop Shaw & Pittman LLP
Tokyo Electron Limited
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