Low-pressure chemical vapor deposition process for depositing th

Details Low-pressure chemical vapor deposition process for depositing th Low-pressure chemical vapor deposition process for depositing th

1991-09-05

1993-03-09

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

427 99, 4272481, C23C 1618, C23C 1634

Patent

active

051925893

ABSTRACT:
An improved process for creating thin titanium nitride films via chemical vapor deposition. The films deposited using the improved process are characterized by low and stable bulk resistivity. The deposition process is performed in a low-pressure chamber (i.e., a chamber in which pressure has been reduced to between 0.1 and 2 Torr), and utilizes ammonia and the metal-organic compound tetrakis(dimethylamido)titanium, Ti(NMe.sub.2).sub.4, as precursors. Ammonia flow rate in the deposition chamber is maintained at more than approximately thirty times the metal-organic precursor flow rate. Such flow rates result in deposited TiN films having low and relatively constant bulk resistivity over time when exposed to an aerobic environment. Oxygen content of films produced using the improved process is less than 5 percent. Additionally, the deposition process is performed at a substrate temperature of at least 200.degree. C., and ideally as high at 450.degree. C. in order to minimize bulk resistivity of the deposited TiN films.

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