Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1994-05-11
1995-03-21
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
4272551, 4272481, 427314, C23C 1618, C23C 1634
Patent
active
053993799
ABSTRACT:
A low-pressure chemical vapor deposition process is disclosed for creating high-density, highly-conformal titanium nitride films which have very low bulk resistivity, and which provide excellent step coverage. The process utilizes a metal-organic compound, tetrakis-dialkylamido-titanium Ti(NR.sub.2).sub.4, as the primary precursor, in combination with a halogen gas selected from the group consisting of fluorine, chlorine and bromine. The wafer is heated to a temperature within a range of 200.degree.-600.degree. C. The halogen gas is admitted to the depositiion chamber before the introduction of the primary precursor compound or simultaneously with the primary precursor compound.
REFERENCES:
patent: 4842897 (1989-06-01), Takeuchi et al.
patent: 5135607 (1992-08-01), Hirai
patent: 5178911 (1993-01-01), Gordon et al.
Katz et al, "Properties of Titanium Nitride Thin Films Deposited by Rapid-Thermal-Low-Pressure-Metalorganic-Chemical-Vapor-Deposition Technique Using Tetrakis (Dimethylamide) Titanium Precursor", J. Appl. Phys. 70(7) Oct. 1991, pp. 3666-3677.
Fox III Angus C.
King Roy V.
Micron Semiconductor Inc.
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