Low-pressure chemical vapor deposition process for depositing hi

Details Low-pressure chemical vapor deposition process for depositing hi Low-pressure chemical vapor deposition process for depositing hi

1993-04-14

1993-09-21

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437245, 427 99, 427573, 4272551, H01L 21285

Patent

active

052468810

ABSTRACT:
A low-pressure chemical vapor deposition process is disclosed for creating high-density, highly-conformal titanium nitride films which have very low bulk resistivity, and which provide excellent step coverage. The process utilizes a metal-organic compound, tetrakis-dialkylamido-titanium Ti(NR.sub.2).sub.4, as the primary precursor, in combination with an activated species which attacks the alkyl-nitrogen bonds of the primary precursor, and which will convert the displaced alkyl groups into a volatile compound. Any noble gas, as well as nitrogen or hydrogen, or a mixture of two or more of the foregoing may be used as a carrier for the precursor. The activated species, which may include a halogen, NH.sub.3, or hydrogen radicals, or a combination thereof, are generated in the absence of the primary precursor, at a location remote from the deposition chamber. The wafer is heated to a temperature within a range of 200.degree.-600.degree. C. The primary precursor molecules and the activated species are mixed, preferably, just prior to being ducted into the deposition chamber. Relatively uncontaminated titanium nitride deposits on the heated wafer surface.

REFERENCES:
patent: 5082517 (1992-01-01), Moslehi
patent: 5089438 (1992-02-01), Katz
patent: 5178911 (1993-01-01), Gordon et al.
patent: 5192589 (1993-03-01), Sandhu
Fix, R. M. et al., "Synthesis of Thin Films . . . ", Chem. Mater., vol. 2, No. 3, 1990, pp. 235-241.

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