Low pressure chemical vapor deposition of tungsten silicide

Details Low pressure chemical vapor deposition of tungsten silicide Low pressure chemical vapor deposition of tungsten silicide

1986-08-11

1987-08-04

Smith, John D.

Fishing, trapping, and vermin destroying

427 91, 427 99, 4272552, 437225, H01L 21285

Patent

active

046845429

ABSTRACT:
A process for preparing tungsten silicide films using low pressure, low temperature chemical vapor deposition to deposit silicon-rich tungsten silicide films. As a source of silicon, higher order silanes, such as disilane and trisilane, are used. The gaseous tungsten source is WF.sub.6. The substrate temperature range is less than about 370.degree. C., while the total pressure range is in the range 0.05-1 Torr. WF.sub.6 flow rates are generally less than 25 sccm, while the higher order silane flow rates are generally less than about 400 sccm.

REFERENCES:
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patent: 4565157 (1986-01-01), Brors
patent: 4608271 (1986-08-01), Hiebea
patent: 4629635 (1986-12-01), Brors
Cooke, "A Review of LPCVD Metallization for Semiconductor Devices", Vacuum, vol. 35, No. 2, pp. 67-73, Feb. 1985.

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