Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1982-12-06
1983-07-26
Powell, William A.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
148187, 156653, 156657, 1566591, 427 95, 4272551, 427294, B05D 512, H01L 744, B44C 122, C03C 1500
Patent
active
043954383
ABSTRACT:
A process for forming a silicon nitride layer on a semiconductor wafer in a low pressure chemical vapor deposition process. The wafer is disposed in a closed reaction chamber evacuated to a low pressure and heated to an elevated temperature in the range of about 650 to 900 degrees Centigrade. The interior of the chamber is supplied with a gaseous mixture of ammonia and a silicon compound adapted to react together with the ammonia at the elevated temperature to deposit a layer of silicon nitride on the wafer. The ammonia and the selected silicon compound have a ratio of relative concentrations in the mixture which is preselected to be in the range of 4:1 and 20:1. The silicon compound may be silane, dichlorosilane, or tetrachlorosilane. Using dichlorosilane, the preferred ratio of relative concentrations of ammonia and dichlorosilane is in the range of about 6:1 to 8:1.
REFERENCES:
patent: 3549411 (1970-12-01), Bean et al.
patent: 4111724 (1978-09-01), Ogiue et al.
patent: 4279947 (1981-07-01), Goldman et al.
Amdahl Corporation
Powell William A.
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