Low pressure chemical vapor deposition of silicon dioxide with o

Details Low pressure chemical vapor deposition of silicon dioxide with o Low pressure chemical vapor deposition of silicon dioxide with o

1979-08-16

1980-12-16

Lawrence, Evan K.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427255, 4272553, C23C 1100

Patent

active

042398118

ABSTRACT:
A method is described for forming a silicon dioxide layer on a semiconductor substrate in a furnace heated reaction zone of a chemical vapor deposition reactor having an input end for gaseous reactants wherein the silicon dioxide layer is not subject to degradation during subsequent oxidation cycles. A gaseous chlorosilane is mixed with nitrous oxide gas in the reactor. Oxygen gas is added, between about 0.25% to 10% by volume of total reactive gas mixture, to the chlorosilane and nitrous oxide gases in the reaction zone where the temperature is between about 800.degree. C. to 1200.degree. C. in a pressure of less than about 5 torr to deposit the silicon dioxide layer onto the substrate.

REFERENCES:
patent: B554164 (1976-03-01), Graul et al.
patent: 3331716 (1967-07-01), Bloem et al.
patent: 3887726 (1975-06-01), Bratter et al.
patent: 4002512 (1977-01-01), Lim
Rosler, R. S., "Low Pressure CVD Production Processes for _Poly, Nitride, and Oxide", Solid State Technology, Apr. 1977, pp. 63-70. _

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