Low pressure chemical vapor deposition of refractory metal silic

Details Low pressure chemical vapor deposition of refractory metal silic Low pressure chemical vapor deposition of refractory metal silic

1985-07-23

1987-05-26

Childs, Sadie L.

Coating processes

Electrical product produced

Welding electrode

427 93, 427 95, 427 99, 427255, 4272552, 4272557, 4274197, B05D 306

Patent

active

046685308

ABSTRACT:
This invention relates to a process and apparatus for the Low Pressure Chemical Vapor Deposition (LPCVD) of polycrystalline refractory metal silicides, such as TiSi.sub.2, in a reactor. An oxidized Si wafer is loaded in the reactor. The reactor is pumped down to a pressure of about 10.sup.-7 Torr, or less. The Si substrate is heated to the predetermined deposition temperature of about 630.degree. C. while avoiding heating of the reactor walls. The reactor is then purged with an inert gas, such as nitrogen. Next, polysilicon is deposited on the wafer by introducing SiH.sub.4 into the reactor at a pressure in the order of 0.2 Torr. A layer of polycrystalline titanium silicide is then formed on the polysilicon layer by introducing reactants, such as TiCl.sub.4 and SiH.sub.4, into the reactor at depositon temperatures between about 650.degree. to 700.degree. C. and pressures of between about 50 to 460 m Torr.

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Article entitled, "Plasma-Enhanced CVD of Titanium Silicide", J. Vac. Sci. Technol., B 2 (4), Oct.-Dec. 1984, pp. 733-737.
Abstract No. 377, from Extended Abstracts, vol. 84-2, Fall Meeting Electrochemical Society, New Orleans, Oct. 7, 1984.

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