Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-08-06
1999-11-02
Breneman, Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438696, 438720, 20419235, H01L 21302
Patent
active
059769866
ABSTRACT:
RIE of metallization is achieved at low power and low pressure using Cl.sub.2 and HCl as reactant species by creating a transformer coupled plasma with power applied to electrodes positioned both above and below a substrate with metallization thereon to be etched. Three layer metallizations which include bulk aluminum or aluminum alloy sandwiched between barrier layers made from, for example, Ti/TiN, are etched in a three step process wherein relatively lower quantities of Cl.sub.2 are used in the plasma during etching of the barrier layers and relatively higher quantities of Cl.sub.2 are used during etching of the bulk aluminum or aluminum alloy layer. The ratio of etchants Cl.sub.2 and HCl and an inert gas, such as N.sub.2 are controlled in a manner such that a very thin side wall layer (10-100 .ANG.) of reaction byproducts created during RIE are deposited on the side walls of trenches formed in the metallization during etching. The side wall layer improves the isotropic nature of the etch such that submicron metallization lines with defect free side walls are formed. Hydrogen (H.sub.2) can be added to the plasma and will act to reduce corrosion.
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Burns Stuart M.
Christie Rosemary
Grewal Virinder
Kocon Walter W.
Naeem Munir D.
Alanko Anita
Breneman Bruce
International Business Machines Corp.
Kabushiki Kaisha Toshiba
Neff Daryl
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