Low power precision current reference

Details Low power precision current reference Low power precision current reference

1998-03-02

2000-07-11

Kim, Jung Ho

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327538, 323315, 323316, G05F 302

Patent

active

060878940

ABSTRACT:
A first complementary metal oxide semiconductor (CMOS) current reference circuit (100, 500) has a first and a second current mirror (110, 150) and is implemented using one of bulk wafer technology and silicon on insulator (SOI) technology. The first current mirror (110) has an output stage (130) that includes at least one cascode coupled field effect transistor (FET) (125) having one of a source tied well (when implemented using bulk wafer technology) or a source tied body (when implemented using SOI technology). A second CMOS current reference circuit (600, 800) has a first and a second current mirror (650, 610) and is implemented using SOI technology. The first current mirror (650) has a first bias FET (161) having a gate tied body.

REFERENCES:
patent: 5045773 (1991-09-01), Westwick et al.
patent: 5221888 (1993-06-01), Moody
patent: 5376839 (1994-12-01), Horiguchi et al.
J. P. Colinge, "Silicon on Insulator Technology: Materials to VLSI," published by Klower Academic Press, 1991, pp. 166-168.
Paul Richman, "MOS Field-Effect Transistors and Integrated Circuits," published by John Wiley and Sons, 1973, pp. 32 through 43.

Affiliated with

Also associated with

Rating

Low power precision current reference does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low power precision current reference, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low power precision current reference will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-545929