Low power phase change memory cell with large read signal

Details Low power phase change memory cell with large read signal Low power phase change memory cell with large read signal

2011-07-05

2011-07-05

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257SE47001, C257SE29003, C257SE29005

Reexamination Certificate

active

07973301

ABSTRACT:
A memory cell includes a first electrode, a second electrode, and phase-change material including a first portion contacting the first electrode, a second portion contacting the second electrode, and a third portion between the first portion and the second portion. A width of the third portion is less than a width of the first portion and a width of the second portion.

REFERENCES:
patent: 6765823 (2004-07-01), Zhu et al.
patent: 6992369 (2006-01-01), Kostylev et al.
patent: 7262502 (2007-08-01), Chang
patent: 7615770 (2009-11-01), Philipp et al.
patent: 2003/0052351 (2003-03-01), Xu et al.
patent: 2003/0067013 (2003-04-01), Ichihara et al.
patent: 2003/0209728 (2003-11-01), Kozicki et al.
patent: 2003/0224292 (2003-12-01), Shingai et al.
patent: 2004/0051161 (2004-03-01), Tanaka et al.
patent: 2004/0109351 (2004-06-01), Morimoto et al.
patent: 2004/0125676 (2004-07-01), Osada et al.
patent: 2004/0178404 (2004-09-01), Ovshinsky
patent: 2006/0226409 (2006-10-01), Burr et al.
patent: 93/02480 (1993-02-01), None
patent: 98/36446 (1998-08-01), None
S. Lai, T. Lowrey, OUM-a 180 nm nonvolatile memory cell element technology for stand alone and embedded applications, IEDM 2001 (6 pgs.).
H.Horii et al., “A novel cell technology using N-doped GeSbTe films for phase change RAM”, VLSI, 2003 (2 pgs.).
Y.N. Hwang et al., “Full integration and reliability evaluation of phase-change RAM based on 0.24μm-CMOS technologies”, VLSI, 2003 (pp. 173-174).
Y.H Ha et al., “An edge contact type cell for phase change RAM reaturing very low power consumption”, VLSI, 2003 (2 pgs.).
S. Lai, “Current Status of the Phase Change Memory and its Future”. IEDM 2003.
J.H. Yi et al., “Novel Cell Structure of PRAM with Thin Metal Layer Inserted GeSbTe”, IEDM 2003.
European Search Report mailed Jul. 3, 2007.

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