Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-10-23
2007-10-23
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S295000, C257SE27006, C438S003000, C365S171000
Reexamination Certificate
active
11066884
ABSTRACT:
Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.
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Dave Renu
Pietambaram Srinivas V.
Rizzo Nicholas D.
Slaughter Jon M.
Ho Tu-Tu
Ingrassia Fisher & Lorenz
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