Low power/high speed static ram

Details Low power/high speed static ram Low power/high speed static ram

1977-01-31

1978-06-20

Konick, Bernard

Static information storage and retrieval

Powering

Conservation of power

307DIG5, 307264, G11C 1140

Patent

active

040965848

ABSTRACT:
An integrated circuit, metal-oxide-semiconductor (MOS) static random-access memory (RAM) with a power-down mode is described. The bistable memory cells employed in the memory include low conductivity, depletion mode transistors used as loads. "Zero" threshold voltage devices are employed on a low body-effect substrate to permit the powering-down of many circuits in the memory without affecting circuit performance. Several circuits employing these zero threshold devices are described.

REFERENCES:
patent: 3703710 (1972-11-01), Kubo et al.
patent: 3848237 (1974-11-01), Geilhufe et al.
patent: 3906464 (1975-09-01), Lattin
patent: 3969708 (1976-07-01), Sonoda
patent: 3995172 (1976-11-01), Freeman et al.
patent: 4019068 (1977-04-01), Bormann

Affiliated with

Also associated with

Rating

Low power/high speed static ram does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low power/high speed static ram, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low power/high speed static ram will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1138778