Low-power-dissipation CMOS oscillator circuits with...

Details Low-power-dissipation CMOS oscillator circuits with... Low-power-dissipation CMOS oscillator circuits with...

2007-09-25

2007-09-25

Kinkead, Arnold (Department: 2817)

Oscillators

Solid state active element oscillator

Transistors

C331S1170FE, C331S167000, C331S185000, C331S17700V

Reexamination Certificate

active

11020023

ABSTRACT:
Methods and apparatus are disclosed for adjusting the frequency tuning range of an oscillator circuit. The oscillator circuit is comprised of at least two MOS devices; a first reactance connecting a drain electrode of a first MOS device to a gate electrode of a second MOS device and a second reactance connecting a drain electrode of the second MOS device to a gate electrode of the first MOS device; and a tank circuit connected to the source and drain electrodes. The first and second reactance may comprises a capacitor or a diode or a combination thereof. In addition, one or more resistors may optionally be connected between a gate electrode of at least one of the MOS device and a power source.

REFERENCES:
patent: 5396195 (1995-03-01), Gabara
patent: 6064277 (2000-05-01), Gilbert
patent: 6867658 (2005-03-01), Sibrai et al.
patent: 6927643 (2005-08-01), Lazarescu et al.
Yamagishi et al., “A Low-Voltage 6-GHz-Band CMOS Monolithic LC-Tank Using a Tuning-Range Switching Technique,” Microwave Symposium Digest, IEEE MTTS-S International, vol. 2, pp. 735-738 (Jun. 11-16, 2000) (Abstract).
Zhang et al., “Monolithic Multi-Phase LC-VCO in Ultra-Thin Silicon-on-Insulator (UTSi/spi reg/-SOI) CMOS Technology,” Circuits and Systems, ISCAS IEEE International Symposium, vol. 2, pp. II-804-806 (May 26-29, 2002) (Abstract).

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