Static information storage and retrieval – Associative memories – Ferroelectric cell
Patent
1998-11-02
2000-10-03
Nelms, David
Static information storage and retrieval
Associative memories
Ferroelectric cell
365156, 36518907, 365190, G11C 1500
Patent
active
061282073
ABSTRACT:
A content addressable memory (CAM) cell that includes a static random access memory (SRAM) cell that operates in response to a V.sub.CC supply voltage. A first set of bit lines coupled to the SRAM cell are used to transfer data values to and from the SRAM cell. The signals transmitted on the first set of bit lines have a signal swing equal to the V.sub.CC supply voltage. A second set of bit lines is coupled to receive a comparison data value. The signals transmitted on the second set of bit lines have a signal swing that is less than the V.sub.CC supply voltage. For example, the signal swing on the second set of bit lines can be as low as two transistor threshold voltages. The second set of bit lines is biased with a supply voltage that is less than the V.sub.CC supply voltage. A sensor circuit is provided for comparing the data value stored in the CAM cell with the comparison data value. The sensor circuit pre-charges a match sense line prior to a compare operation. If the data value stored in the CAM cell does not match the comparison data value, the match sense line is pulled down. The signal swing of the match sense line is smaller than the V.sub.CC supply voltage. For example, the signal swing on the match sense line can be as low as one transistor threshold voltage.
REFERENCES:
patent: 4377855 (1983-03-01), Lavi
patent: 4559618 (1985-12-01), Houseman et al.
patent: 4646271 (1987-02-01), Uchiyama et al.
patent: 4694425 (1987-09-01), Imel
patent: 4723224 (1988-02-01), Van Hulett et al.
patent: 5351208 (1994-09-01), Jiang
patent: 5440709 (1995-08-01), Edgar
patent: 5699288 (1997-12-01), Kim et al.
patent: 5715188 (1998-02-01), Covino et al.
patent: 5859791 (1999-01-01), Schultz et al.
Lien Chuen-Der
Wu Chau-Chin
Ho Hoai V.
Integrated Device Technology Inc.
Nelms David
LandOfFree
Low-power content addressable memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low-power content addressable memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-power content addressable memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-201794