Low power consumption type thin film gas sensor

Chemistry: electrical and wave energy – Apparatus – Electrolytic

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Details

204426, 204431, 422 98, G01N 2712, G01N 27407

Patent

active

055453007

ABSTRACT:
This invention relates to a low power consumption type thin film gas sensor and method for fabricating the same. The gas sensor includes a silicon substrate having a window in the central part of one side thereof, masking material formed on the one side thereof except the window, a supporting film formed of an etch stop layer and a glass film on the other side of the substrate, heaters and temperature sensors arranged in parallel on the supporting film facing the window, an interlayer insulation film formed on the supporting film to cover the heaters and the temperature sensors, sensing film electrodes formed on the interlayer insulation film, and a sensing film formed on the interlayer insulation film so as to cover the sensing film electrodes for sensing a particular gas.

REFERENCES:
patent: 4706493 (1987-11-01), Chang et al.
patent: 4953387 (1990-09-01), Johnson et al.
patent: 5211053 (1993-05-01), Nolting et al.
patent: 5228975 (1993-07-01), Yamada et al.
patent: 5262127 (1993-11-01), Wise et al.

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