Low power consumption process-insensitive feedback amplifier

Details Low power consumption process-insensitive feedback amplifier Low power consumption process-insensitive feedback amplifier

1993-06-01

1996-02-13

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330282, 330294, H03F 134

Patent

active

054914507

ABSTRACT:
A low power consumption amplifier that is essentially insensitive to the process used to fabricate the active devices of the amplifier employs feedback to minimize variations in electrical characteristics of the devices. For weight-sensitive microwave applications, a high electron mobility transistor (HEMT) or a pseudomorphic high electron mobility transistor (PHEMT) may be selected as an active device for each stage of the amplifier. HEMTs and PHEMTs typically exhibit greater device gain than do MESFETs, especially at the upper portion of X-band and above, so that a HEMT- or PHEMT-based stage of an amplifier where additional overall gain is required, can be achieved without significantly adversely affecting power consumption demands, and attendant electrical energy storage/generation requirements while achieving and/or maintaining an overall flat gain characteristic of the amplifier.

REFERENCES:
patent: 5015968 (1991-05-01), Podell et al.
patent: 5068624 (1991-11-01), Taneichi et al.
patent: 5208547 (1993-05-01), Schindler

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