Low power CMOS crystal oscillator

Details Low power CMOS crystal oscillator Low power CMOS crystal oscillator

1980-12-15

1983-06-07

Grimm, Siegfried H.

Oscillators

Solid state active element oscillator

Transistors

368159, H03B 536

Patent

active

043873499

ABSTRACT:
A two transistor CMOS inverter has the two transistor gates coupled together by a coupling capacitor. D-C gate bias is supplied to each transistor through high value resistors. The P-channel transistor is biased one threshold below V.sub.DD and the N-channel transistor is biased one threshold above ground. The biasing voltages are developed through the use of a current mirror so that the biasing is independent of processing variables and temperature. This form of biasing renders the circuit class B regardless of the source to drain voltage and ensures low current operation. A crystal oscillator created using such an inverter and biasing will operate at voltages substantially below sum of P and N thresholds and at a current level about one-fifth of that of a conventional CMOS oscillator.

REFERENCES:
patent: 3887881 (1975-06-01), Hoffmann
patent: 4095195 (1978-06-01), Saito
patent: 4307354 (1981-12-01), Miyagawa et al.
patent: 4309665 (1982-01-01), Yamashiro

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