Low parasitic capacitance pressure transducer and etch stop meth

Details Low parasitic capacitance pressure transducer and etch stop meth Low parasitic capacitance pressure transducer and etch stop meth

1984-01-13

1985-04-23

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Variable

29 2541, 73718, H01G 700, G01L 912

Patent

active

045133484

ABSTRACT:
A capacitive pressure transducer has a pedestal 25 formed in a silicon layer 14 surrounded by a moat 26 extending through the silicon layer, with borosilicate glass 17, 22 at the edges of the silicon layer forming the walls of the pressure chamber, with a wafer 28 of silicon bonded thereto. The pedestal 25 is joined to the walls of the vacuum chamber by borosilicate glass 16, whereby it is wholly, electrically isolated therefrom. A method of forming a capacitive pressure transducer utilizing the variable etch rates of aluminum, glass and silicon, together with field assisted bonding, is also disclosed.

REFERENCES:
patent: 3634727 (1972-01-01), Polye
patent: 4405970 (1983-09-01), Swindale et al.
patent: 4415948 (1983-11-01), Grantham et al.
patent: 4420790 (1983-12-01), Golke et al.
patent: 4426673 (1984-01-01), Bell et al.

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