Low parasitic capacitance diode

Details Low parasitic capacitance diode Low parasitic capacitance diode

1977-02-18

1979-03-06

Larkins, William D.

357 55, 357 68, 357 89, 357 13, H01L 2948, H01L 2906

Patent

active

041433840

ABSTRACT:
A semiconductor device with active junction area determined by the surface of the floor of a hole etched into a body of semiconductor material. A body of highly doped semiconductor material is overlayed with two layers of semiconductor material of the same conductivity type. The layer in contact with the highly doped body is moderately doped while the upper layer is very lightly doped. A hole is etched through the top layer extending slightly into the moderately doped layer. A Schottky barrier contact is plated throughout the etched region. The total parasitic capacitance of such devices is much lower than that of prior art devices and the reverse breakdown characteristics are improved.

REFERENCES:
patent: 3516017 (1970-06-01), Kanelco et al.
patent: 3646411 (1972-02-01), Iwasa
patent: 3742317 (1973-06-01), Shao
patent: 3808470 (1974-04-01), Kniekamp
Sze, Physics of Semiconductor Devices (Wiley, NY, 1969), p. 43.

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