Patent
1977-03-23
1978-06-27
Wojciechowicz, Edward J.
357 49, 357 52, 357 56, 357 68, 357 69, 357 71, H01L 2906
Patent
active
040978907
ABSTRACT:
A beamlead semiconductor component and a method for manufacturing the semiconductor device with low parasitic capacitance and electrical resistance is provided. The beamlead component includes a thick layer of glass forming one end of the component directly beneath one of the beamleads and extending up to the edge of the active device on the beamlead surface of the component. On the opposite side of the active device from the glass layer is a metalized cavity that provides the electrical contact for a second beamlead with the semiconductor substrate. From the other surface, the non-beamlead surface, of the component another metalized cavity adjacent to the active region of the component and the metalized cavity on the beamlead surface has been etched. The cavity in the other surface of the component exposes a portion of the deepest surface of the metalization in the cavity on the beamlead surface to make electrical contact between the two metalizations. These interconnected cavities thus provide an electrical via between the two surfaces of the component.
The use of the thick layer of glass beneath the one beamlead provides a considerable reduction in the parasitic capacitance between this beamlead and various layers of the substrate to which it is not connected. The metalized cavity in the other surface of the component substrate and the via reduces the resistance of the device by thinning the substrate beneath the active region and limiting the length of longest current path through the semiconductor material to a single thickness of that material.
REFERENCES:
patent: 3648131 (1972-03-01), Stuby
patent: 3884733 (1975-05-01), Bean
patent: 3969745 (1976-07-01), Blocker
patent: 3979765 (1976-09-01), Brand
Morris Raymond A.
Viola, Jr. Thomas J.
Hewlett--Packard Company
Jones Allston L.
Wojciechowicz Edward J.
LandOfFree
Low parasitic capacitance and resistance beamlead semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low parasitic capacitance and resistance beamlead semiconductor , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low parasitic capacitance and resistance beamlead semiconductor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2308808