Low output capacitance, double-diffused field effect transistor

Details Low output capacitance, double-diffused field effect transistor Low output capacitance, double-diffused field effect transistor

1992-07-07

1994-03-22

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257290, 257328, 257408, 257409, H01L 3112

Patent

active

052967239

ABSTRACT:
A low output capacitance, double-diffused field effect transistor effectively realizes the reduction in the output capacitance, by providing a drain electrode on one surface of a first conduction type semiconductor substrate, forming on the other surface of the substrate, through a double diffusion, second conduction type well regions and first conduction type source regions for connection therewith of a source electrode, forming channel regions in surface zone of the well regions disposed between first conduction type zone of the semiconductor substrate and the source regions, above which channel regions being provided gate electrodes through an insulating film, forming a guard ring region surrounding the well regions, and connecting at least one capacitance component means to the gate electrodes.

REFERENCES:
patent: 3461360 (1969-08-01), Barson et al.
patent: 3484865 (1969-12-01), Nienhuis
patent: 3798514 (1974-03-01), Hayashi et al.
patent: 4009483 (1977-02-01), Clark
patent: 4072975 (1978-02-01), Ishitani
patent: 4455565 (1984-06-01), Goodman et al.
patent: 4466175 (1984-08-01), Coe
patent: 4705759 (1987-11-01), Lidow et al.
patent: 4902626 (1990-02-01), Akiyama et al.
patent: 5023678 (1991-06-01), Kinzer
patent: 5179034 (1993-01-01), Mori et al.

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