Low operating current and low noise semiconductor laser device f

Details Low operating current and low noise semiconductor laser device f Low operating current and low noise semiconductor laser device f

1993-03-31

1995-01-31

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053864298

ABSTRACT:
A semiconductor laser device suitable as a light source for an optical disk may be operated at a low operating current with low noise for the 780 nm band. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type as the light guide layers formed on the stripe-like window. The relations of Z>Y3>Y2 and Y1>Y2 define the AlAs mole fractions.

REFERENCES:
patent: 5279158 (1994-03-01), Naitou et al.

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