Low-noise zener diode

Details Low-noise zener diode Low-noise zener diode

1995-11-21

1997-03-18

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

Avalanche diode

257483, 257490, 257551, 257603, 257605, 257606, 257653, H01L 29861

Patent

active

056125682

ABSTRACT:
A low-noise Zener diode that enables to improve the surge resistance performance without degeneration of its low-noise characteristic is provided. The diode contains a semiconductor substrate of a first conductivity type and a first impurity doped region of a second conductivity type formed in a surface area of the substrate. The first impurity doped region has spaces into which no impurity of the second conductivity type is doped. The diode further contains a second impurity doped region of the second conductivity type formed in the first impurity doped region. The second impurity doped region has a depth less than that of the first impurity doped region. The second impurity doped region is contacted with the substrate in the spaces, producing main p-n junctions of the diode at respective interfaces of the second impurity doped regions and the substrate. The second impurity doped region is contacted with the first impurity doped region other than in the spaces. Heat generation zones of the main p-n junctions are combined with each other to produce a total heat generation zone that is greater than a sum area of the main p-n junctions.

REFERENCES:
patent: 5336924 (1994-08-01), Quint

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