Low noise transistor module and amplifier

Details Low noise transistor module and amplifier Low noise transistor module and amplifier

1997-11-20

1999-11-02

Pascal, Robert

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330308, 257207, H03F 316, H03F 308, H01L 2710

Patent

active

059778300

ABSTRACT:
A low noise transistor IC or module comprises a plurality of conventional CMOS transistors which are laid out in parallel in such a way that the effective gate width of the combination of transistors is increased, yet the effective gate resistance and hence the noise figure (NF) of the circuit are reduced. A low noise amplifier incorporating such a module is also described.

REFERENCES:
patent: 4264874 (1981-04-01), Young
patent: 5693966 (1997-12-01), Anazawa et al.
patent: 5714784 (1998-02-01), Ker et al.
I. Yoshida et al., Highly Efficient UHF-Band Si Power MOSFETs for RF Power Amplifiers, Electronics and Communications in Japan, Part 2, vol. 77, No. 4, pp. 10-19 (1994).

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