Low-noise thermo-ionic injection diode

Details Low-noise thermo-ionic injection diode Low-noise thermo-ionic injection diode

1975-09-08

1976-11-16

Lynch, Michael J.

Oscillators

Relaxation oscillators

357 33, 357 57, 331107R, H01L 2990

Patent

active

039927156

ABSTRACT:
A thermo-ionic diode with a very noise figure, using a special semiconductor structure, is provided. The structure comprises, upon a P.sup.+ doped silicon substrate, a succession of N-doped layers whose thicknesses and impurity ratios are designed to optimize the noise figure, a final P.sup.+ type layer covering the structure. The injecting junction of the diode is located at the transition between the said P.sup.+ layer and the nearest N type layer having a weak doping.

REFERENCES:
patent: 3469117 (1969-09-01), Mizushima et al.
patent: 3668555 (1972-06-01), Kasperkovitz
patent: 3824490 (1974-07-01), Riley
G. Wright, "`Punch-Through` Transit-Time Oscillator," Electronics Letters, vol. 4 No. 24, Nov. 29, 1968, pp. 543-544.
V. Sheorey et al., "Analy. of Punch-Through-Injection for a Transit-Time Neg. Res. Diode," Int. J. Electronics, vol. 30 No. 1, 1970, pp. 19-32.
S. Liu et al., "Low-Noise Punch-Through PN-VP, PNP, and P-N-Metal Microwave Diodes, "RCA Review, vol. 32, Dec., 1971, pp. 636-644.
J. Chu et al., "Microwave Oscillators in PNP Reach-Through Baritt Diodes," S-S Electronics, vol. 16, Jan. 1973, pp. 85-91.

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