Low noise semiconductor device

Details Low noise semiconductor device Low noise semiconductor device

2011-07-26

2011-07-26

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S532000, C257SE23153

Reexamination Certificate

active

07986037

ABSTRACT:
As a power feed route in a semiconductor chip, a power feed route which reduces antiresonance impedance in the frequency range of tens of MHz is to be realized thereby to suppress power noise in a semiconductor device. By inserting structures which raise the resistance in the medium frequency band into parts where the resistance is intrinsically high, such as power wiring in a semiconductor package and capacitor interconnecting electrode parts, the antiresonance impedance in the medium frequency band can be effectively reduced while keeping the impedance low at the low frequency.

REFERENCES:
patent: 6873219 (2005-03-01), Grebenkemper
patent: 2001/0050182 (2001-12-01), Takeshita et al.
patent: 2007/0085200 (2007-04-01), Lu et al.
patent: 2007/0145559 (2007-06-01), Uematsu et al.
patent: 2008/0258259 (2008-10-01), Osaka et al.
patent: 11-97810 (1997-09-01), None
patent: 2001-244582 (2000-02-01), None
patent: 2006-32823 (2004-07-01), None

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