Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to increase current gain or operating frequency
Reexamination Certificate
2006-11-28
2006-11-28
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to increase current gain or operating frequency
C257S577000, C257S587000, C257S592000, C257SE29124, C438S329000, C438S350000
Reexamination Certificate
active
07141865
ABSTRACT:
A Low Noise semiconductor amplifier structure formed from layers of differently doped semiconductor material.This structure when properly biased will amplify voltage signals applied to the input terminal (Base1 or signal-base), and provide the same signal, amplified at the terminal designated as the output or collector. The semiconductor material can be any of a number of semiconductor materials, Germanium, Silicon, Gallium-Arsenide or any material with suitable semi-conducting properties. The structure can be any BJT (Bipolar Junction Transistor) form.The presence of an additional, distinct highly doped layer indicated as Base2 in the BJT form, provides an electrical noise suppression function. This inhibits intrinsic electrical noise, and improves the high frequency performance of the device in conjunction with an external capacitor connected to this new Base2 (or anti-base) region. This layer when properly biased reduces the inherent noise levels due to shot and flicker noise in the semiconductor structure to very low levels.
REFERENCES:
patent: 2895058 (1959-07-01), Pankove
patent: 3802968 (1974-04-01), Ghosh et al.
patent: 3955154 (1976-05-01), Sasaki et al.
patent: 4302691 (1981-11-01), Kelley
patent: 4529947 (1985-07-01), Biard et al.
patent: 4639686 (1987-01-01), Beckenbach et al.
patent: 4901122 (1990-02-01), Xu et al.
patent: 5160899 (1992-11-01), Anderson et al.
patent: 5274267 (1993-12-01), Moksvold
patent: 5352911 (1994-10-01), Grossman
patent: 5719432 (1998-02-01), Kariyazono et al.
patent: 6066863 (2000-05-01), Fujishima
patent: 2001/0013610 (2001-08-01), Chi et al.
Horowitz et al., The Art of Electronics, 1989,Cambridge University Press, pp. 42, 76 and 77.
Baumeister B. William
Fulk Steven J.
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