Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1994-04-29
1996-12-10
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257438, 257458, 257459, 257465, H01L 310328, H01L 31107, H01L 31075, H01L 3100
Patent
active
055833527
ABSTRACT:
A new reach-through APD structure which includes a five-layer, double-drift-region, double-junction device, having a p.sup.+ -p-n-p.sup.- -n.sup.+ structure. The middle three layers of the new APD constitute most of the thickness of the device and are fully depleted when the device is biased to its normal operating voltage. In the present invention, only primary carriers generated in the relatively narrow first drift region are subject to the full avalanche gain, resulting in dark current and noise levels much lower than conventional reach-through APD's. The new structure can be used to fabricate integrated arrays of APD's. These arrays are more durable and easily fabricated than are prior art APD's. Additionally, the new array structure does not require segmentation or isolation of the multiplying regions of the different elements of the array, allowing arrays to be made with little or no dead space between elements.
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McIntyre Robert J.
Webb Paul P.
Crane Sara W.
EG&G Limited
Martin Wallace Valencia
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