Low noise propagation semiconductor device

Details Low noise propagation semiconductor device Low noise propagation semiconductor device

1996-05-31

1998-08-04

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

257544, H01L 2900

Patent

active

057897980

ABSTRACT:
A semiconductor device has a p-n-p transistor structure having a collector implemented by a p.sup.- -substrate, a base formed as an n-diffused region in the surface region of the substrate, and an emitter formed as a p.sup.+ -diffused region in the first n-diffused layer. The p.sup.- -substrate and the n-base are maintained at a ground level, while the p.sup.+ -collector is maintained at a positive potential for biasing the p-n junction formed between the emitter and the base. The bias potential allows the p-n-p transistor structure to operate in its saturation region to activate the base region to define an enlarged carrier-incresed zone. An analog input pad is located within the carrier-increased zone and protected from a noise propagated from a digital circuit section located outside the carrier-increased zone.

REFERENCES:
patent: 3197681 (1965-07-01), Broussard
patent: 3615938 (1971-10-01), Tsai
patent: 3758797 (1973-09-01), Peterson et al.
patent: 3946425 (1976-03-01), Shoji et al.
patent: 4110782 (1978-08-01), Nelson et al.
patent: 4170501 (1979-10-01), Khajezadeh
patent: 4792837 (1988-12-01), Zazzu

Affiliated with

Also associated with

Rating

Low noise propagation semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low noise propagation semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low noise propagation semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1180093