Amplifiers – With semiconductor amplifying device – Including combined diverse-type semiconductor device
Patent
1983-02-04
1985-02-19
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including combined diverse-type semiconductor device
330264, 330269, 330311, 330156, H03F 316, H03F 326
Patent
active
045008493
ABSTRACT:
A low noise power amplifier in which a buffer including a field effect transistor coupled in a source follower configuration is interposed between a voltage amplifying stage and a power amplifying stage, the latter utilizing a single-ended push-pull emitter follower configuration. A cascode transistor is cascade connected with the field effect transistor. A constant current source is provided for supplying current to the source of the field effect transistor. Field effect transistor buffers are preferably provided between the voltage amplifying stage and both positive and negative amplifying portions of the power amplifying stage.
REFERENCES:
patent: 4390852 (1983-06-01), Addis
Mottola Steven J.
Mullins James B.
Pioneoer Electronic Corporation
LandOfFree
Low noise power amplifier circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low noise power amplifier circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low noise power amplifier circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-615578