Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-04-24
1986-07-29
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29610R, 29590, 357 59, 148DIG136, H01L 21477, H01L 2126, H01H 1000
Patent
active
046024212
ABSTRACT:
Low noise polycrystalline silicon resistors are fabricated in the following sequence:
REFERENCES:
patent: 3308528 (1967-03-01), Bullard et al.
patent: 3765940 (1973-10-01), Hentzschel
patent: 4154873 (1979-04-01), Hickox et al.
patent: 4210996 (1980-07-01), Amemiya et al.
patent: 4214917 (1980-01-01), Clark et al.
patent: 4420766 (1983-12-01), Hasten
patent: 4516313 (1985-05-01), Turi et al.
U.S. application Ser. No. 325,441, by Joseph Y. M. Lee entitled Polycrystalline Semiconductor Resistor with Profiled Ion Implantation for Reducing Noise.
IBM Technical Disclosure Bulletin, vol. 15, No. 9, dated Feb. 1973.
Chuh Thomas Y.
Kriegel Michael H.
Lee Joseph Y.
Auton William G.
Callahan J.
Hearn Brian E.
Singer Donald J.
The United States of America as represented by the Secretary of
LandOfFree
Low noise polycrystalline semiconductor resistors by hydrogen pa does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low noise polycrystalline semiconductor resistors by hydrogen pa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low noise polycrystalline semiconductor resistors by hydrogen pa will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-694649