Low noise polycrystalline semiconductor resistors by hydrogen pa

Metal working – Method of mechanical manufacture – Assembling or joining

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29576B, 29610R, 29590, 357 59, 148DIG136, H01L 21477, H01L 2126, H01H 1000

Patent

active

046024212

ABSTRACT:
Low noise polycrystalline silicon resistors are fabricated in the following sequence:

REFERENCES:
patent: 3308528 (1967-03-01), Bullard et al.
patent: 3765940 (1973-10-01), Hentzschel
patent: 4154873 (1979-04-01), Hickox et al.
patent: 4210996 (1980-07-01), Amemiya et al.
patent: 4214917 (1980-01-01), Clark et al.
patent: 4420766 (1983-12-01), Hasten
patent: 4516313 (1985-05-01), Turi et al.
U.S. application Ser. No. 325,441, by Joseph Y. M. Lee entitled Polycrystalline Semiconductor Resistor with Profiled Ion Implantation for Reducing Noise.
IBM Technical Disclosure Bulletin, vol. 15, No. 9, dated Feb. 1973.

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