Amplifiers – With semiconductor amplifying device – Including field effect transistor
Reexamination Certificate
2007-11-27
2007-11-27
Choe, Henry (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including field effect transistor
C330S253000
Reexamination Certificate
active
11267330
ABSTRACT:
An analog circuit for processing analog signals in an integrated circuit comprising a number of metal oxide semiconductor transistor devices. The circuit includes a first transistor device having a thin oxide thickness, and a second transistor device having a thicker oxide thickness. A voltage pulse protection is arranged to maintain the operating voltage of the thin oxide transistor in the presence of a rapidly rising voltage waveform (e.g. ESD), or at least to mitigate its effect on the thin oxide transistor device. Preferably a cascode based op amp structure is implemented.
REFERENCES:
patent: 5696459 (1997-12-01), Neugebauer et al.
patent: 5729178 (1998-03-01), Park
patent: 6486821 (2002-11-01), Aude et al.
patent: 6504433 (2003-01-01), Weber et al.
patent: 6657495 (2003-12-01), Ivanov et al.
patent: 2001/0040259 (2001-11-01), Shiiki et al.
patent: 2003/0155976 (2003-08-01), Weber et al.
patent: 2003/0219111 (2003-11-01), Frey
patent: 2322042 (1996-12-01), None
patent: 2 396 983 (2004-07-01), None
patent: 2000-236226 (2000-08-01), None
Choe Henry
Dickstein & Shapiro LLP
Wolfson Microelectronics plc
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