Amplifiers – With semiconductor amplifying device – Including field effect transistor
Reexamination Certificate
2006-09-26
2006-09-26
Mottola, Steven J. (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including field effect transistor
C330S253000, C330S298000
Reexamination Certificate
active
07113042
ABSTRACT:
The present invention relates amplifiers using metal oxide semiconductor based integrated circuits. The present invention is particularly but not exclusively related to audio application mixed signal chips. The present invention provides an analog circuit for processing analog signals in an integrated circuit comprising a number of metal oxide semiconductor transistor devices, the circuit stage comprising a first said transistor device having a first oxide thickness, and a second said transistor device having a second and different oxide thickness. Preferably a cascode based op amp structure is implemented.
REFERENCES:
patent: 5696459 (1997-12-01), Neugebauer et al.
patent: 5729178 (1998-03-01), Park
patent: 6486821 (2002-11-01), Aude et al.
patent: 6504433 (2003-01-01), Weber et al.
patent: 6657495 (2003-12-01), Ivanov et al.
patent: 2001/0040259 (2001-11-01), Shiiki et al.
patent: 2003/0155976 (2003-08-01), Weber et al.
patent: 2003/0219111 (2003-11-01), Frey
patent: 2004/0190209 (2004-09-01), Jozwiak et al.
patent: 2322042 (1998-12-01), None
patent: 2 396 983 (2004-07-01), None
patent: 2000-236226 (2000-08-01), None
Pennock John L.
Richard Patrick E.
Dickstein Shapiro
Mottola Steven J.
Wolfson Microelectronics plc
LandOfFree
Low noise op amp does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low noise op amp, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low noise op amp will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3527148