Low noise multi-stage type amplifier

Details Low noise multi-stage type amplifier Low noise multi-stage type amplifier

1991-05-22

1992-12-15

LaRoche, Eugene R.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330286, H03F 316

Patent

active

051720744

ABSTRACT:
In a low-noise multistage amplifier of this invention, operation currents of amplifiers in respective stages (in particular, first- and final-stage amplifiers) are set so that an optimal signal source reflection coefficient .GAMMA..sub.opt and S parameters are almost not varied by manufacturing variations. The lengths of source stubs connected to FETs of the amplifiers in the respective stages are optimally set in units of stages so that characteristics of the amplifier do not change due to the manufacturing variations, and a sufficient gain can be obtained.

REFERENCES:
patent: 4623848 (1986-11-01), Saka et al.
patent: 4631495 (1986-12-01), Mueller et al.
patent: 5010588 (1991-04-01), Gimlett
A 12 GHz 140K Low Noise GaAs FET Amplifier, by Fujiki et al.
Microwave Field-Effect Transistors, IEEE, Jun. 1976 by Liechti.
Lehmann et al., "X-Band Monolithic Series Feedback LNA", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-33, No. 12, pp. 1560-1566, Dec. 1985.
Albinsson, "A Graphic Design Method for Matched Low-Noise Amplifiers", IEEE Transactions on Microwave Theory and Techniques, vol. 38, No. 2, pp. 118-122, Feb. 1990.
Heston, et al., "Monolithic Breadboard: Key to Radical MMIC Size Reduction", Microwave Journal, vol. 33, No. 4, pp. 283-286, Apr. 1990.

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