Low noise microwave amplifier having optimal stability, gain, an

Details Low noise microwave amplifier having optimal stability, gain, an Low noise microwave amplifier having optimal stability, gain, an

1988-08-16

1989-10-31

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330286, H03F 316

Patent

active

048780332

ABSTRACT:
A gallium arsenide MESFET amplifier circuit employing a parallel feedback network having first and second transmission line section filtering networks connected on either side of a series R-C-R circuit. In one optimized embodiment, the transmission line sections each include low and high impedances unequal in length to one-quarter wavelength. The use of two discrete resistors, together with the filtering networks to eliminate thermal noise generated by the resistors, provides optimum gain, low noise, and stable operation over a wide range of microwave frequencies.

REFERENCES:
patent: Re32132 (1986-04-01), Nakamura et al.
Riml, Peter, "13 cm GaAsFET Preamp", QST, Aug. 1984, p. 65.

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