Amplifiers – With semiconductor amplifying device – Including plural stages cascaded
Reexamination Certificate
2001-02-22
2002-06-04
Lee, Benny (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural stages cascaded
C330S098000
Reexamination Certificate
active
06400229
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to electronic circuits and systems. More specifically, the present invention relates to radio frequency amplifiers used in communications systems.
2. Description of the Related Art
Signal integrity is a critical consideration in the design and operation of amplifier circuits, particularly when used in transmitters and receivers for communications systems. For a variety of applications, it is imperative that the output of the amplifier accurately tracks the input. Inevitably, noise and distortion introduce inaccuracies in the output signal, which will then be propagated throughout the rest of the system. In this connection, the term ‘noise’ refers to the thermal noise generated by the circuit, while ‘distortion’ refers to the nonlinearities produced by the circuit design such as harmonics or intermodulation products.
Currently, conventional low noise amplifiers are designed to keep the thermal noise level to a minimum by using larger transistors. The large signal currents in the larger transistors, however, inherently produce high intermodulation distortion, particularly at high (e.g., radio) frequencies. There is currently no method for simultaneously minimizing both noise and distortion in an RF amplifier.
Hence, a need remains in the art for an improved radio frequency amplifier design offering wider bandwidth, lower noise, and lower distortion.
SUMMARY OF THE INVENTION
The present invention uses a bootstrap design technique in a low noise radio frequency amplifier in order to achieve a wide bandwidth, low noise figure, and low distortion all at once.
In the illustrative embodiment, the invention includes a first circuit for receiving an input signal; a second circuit for amplifying the input signal using a transistor Q
2
; and a third circuit for regulating a rate of change of voltage across the transistor Q
2
such that the rate of voltage change is zero. The third circuit includes a transistor Q
3
connected to the transistor Q
2
in cascode. In the specific illustrative embodiment, the third circuit further includes two diodes D
1
and D
2
used to modulate the voltage at the input of the transistor Q
3
in proportion to the voltage modulation at the input of the transistor Q
2
. Thus, the rate of voltage change across the transistor Q
2
is zero, and the high intermodulation distortion normally generated in a conventional low noise amplifier is eliminated. The transistor Q
2
can then be enlarged to minimize thermal noise without reducing bandwidth or degrading distortion performance.
In the illustrative embodiment, the second circuit includes a transistor Q
1
connected in cascade to the transistor Q
2
. The transistor Q
1
buffers the input from the high current running from the transistor Q
2
. In the specific illustrative embodiment, the invention further includes a fourth circuit for regulating a rate of change of voltage across the transistor Q
1
such that the rate of voltage change is zero. The fourth circuit includes a transistor Q
4
connected to the transistor Q
1
in cascode. The two diodes D
1
and D
2
also connect the transistors Q
1
and Q
4
such that the voltage at the input of the transistor Q
4
is modulated in proportion to the voltage modulation at the input of the transistor Q
1
. Thus, the rate of voltage change across the transistor Q
1
is zero, and the transistor Q
1
can also be enlarged to minimize thermal noise without reducing bandwidth or degrading distortion performance.
The present invention provides a larger bandwidth, a lower noise figure and lower distortion than what has been achievable up to this point in time. These advantages are afforded by the fact that a bootstrap design is used to regulate the voltage excursions across the main noise-setting, distortion determining transistor Q
2
. The size of Q
2
can then be enlarged to reduce noise without generating distortion. In addition, the bootstrap of the transistor Q
1
allows its size to also be enlarged to reduce noise without degrading distortion performance.
REFERENCES:
patent: 5623230 (1997-04-01), Goldthorp
patent: 6163211 (2000-12-01), Morrish
patent: 6218906 (2001-04-01), Lohninger
patent: 6246290 (2001-06-01), Morrish et al.
Devendorf Don C.
Duong Clifford
Farias Michael N.
Linder Lloyd F.
Tran Kelvin T.
Alkov Leonard A.
Choe Henry
Lee Benny
Lenzen, Jr. Glenn H.
Raytheon Company
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