Low noise-low distortion hemt low noise amplifier (LNA) with mon

Amplifiers – With semiconductor amplifying device – Including signal feedback means

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330300, H03F 134

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057105235

ABSTRACT:
A low noise amplifier (LNA), formed as a monolithic microwave integrated circuit (MMIC), includes a high-electron mobility transistor (HEMT) and utilizes tunable heterojunction bipolar transistor (HBT) active feedback to improve the amplifier's gain-bandwidth and linearity performance and to provide for self-biasing of the HEMT. In addition to enhancing the self-biasing, the MMIC, in accordance with the present invention, allows the frequency bandwidth and linearity characteristics of the LNA to be adjusted after the MMIC LNA has been fabricated without significantly degrading the noise figure performance.

REFERENCES:
patent: 4608542 (1986-08-01), Siegel
patent: 5051372 (1991-09-01), Sasaki
patent: 5264806 (1993-11-01), Kobayashi
patent: 5312765 (1994-05-01), Kanber
patent: 5355096 (1994-10-01), Kobayashi
Song et al., "Self-Aligned InAlAs/InGaAs Heterojunction Bipolar Transistor With a Buried Subcollector Grown by Selective Epitaxy", IEEE Election Device Letters, vol. 15, No. 4, Apr. 1994, pp. 123-125.
Streit et al., "A Monolithic HBT-Regulated HEMT LNA by Selective MBE," IEEE Microwave and Guided Wave Letters, vol. 5, No. 4, Apr. 1995, pp. 124-126.
Kobayashi et al., "A Novel Heterojunction Bipolar Transistor Active Feedback Design," IEEE Microwave and Guided Wave Letters, vol. 4, No. 5, May 1994, pp. 146-148.
Chu et al., "A Highly Linear MESFET," 1991 MTT Symp. Dig., Boston, MA.
Struble et al., "Modelling Intermodulation Distortion in GaAs MESFETs Using Pulsed I-V Characteristics," 1991 IEEE GaAs IC Symp. Dig., Monterey, CA, pp. 179-182.
Chu et al., "High Linearity Monolithic Broadband Pseudomorphic Spike-Doped MESFET Amplifiers," 1992 IEEE GaAs IC Symp. Dig., Miami, FL, pp. 211-214.
H. Seidel, "A Feedforward Experiment Applied to an L-4 Carrier System Amplifier," IEEE Trans. on Communication Technology, vol. COM-19, No. 3, Jun. 1971, pp. 320-325.
Katz et al., "Passive FET MMIC Linearizers for C, X and Ku-Band Satellite Applications," 1993 IEEE MMWMC Symp. Dig., Atlanta, GA, pp. 155-158.
Katz et al., "A Reflective Diode Linearizer for Spacecraft Applications," 1985 IEEE MTT Symp. Dig., St. Louis, Missouri, pp. 661-664.
Inada et al., "A Compact 4-GHz Linearizer for Space Use," IEEE Trans. on MTT, vol. MTT-34, No. 12, Dec. 1986, pp. 1327-1986.
Muraguchi et al., "A Linear Limiter: A ll GHz Monolithic Low Distortion Variable Gain Amplifier," 1991 IEEE MTT Symp. Dig., Boston, MA, pp. 525-528.
Nishikawa et al., "An MMIC Low-Distortion Variable-Gain Amplifier Using Active Feedback," 1995 IEEE MTT Symp. Dig., Orlando, FL, pp. 1619-1622.
Pedro et al., "An MMIC Linearized Amplifier Using Active Feedback," 1993 IEEE MMWMC Symp. Dig., Atlanta, GA, pp. 113-116.
Streit et al, "Monolithic HEMT-HBT Integration by Selective MBE," IEEE Trans. on Electron Devices, vol. 42, No. 4, Apr. 1995, pp. 618-623.

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