Low noise injection laser structure

Coherent light generators – Particular active media – Semiconductor

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372 19, 372 32, 372 92, H01S 319

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046317309

ABSTRACT:
The present invention pertains to an injection laser which advantageously reduces main mode output power fluctuation. The laser comprises a laser cavity having an active material joined at one end to a passive waveguide. The passive waveguide has a length which is equal to or greater than the length of the active material and an index of refraction which is substantially equal to that of the active material to prevent multicavity interference. In preferred embodiments of the present invention, the passive material is fabricated from a semiconductor material having a bandgap which is larger in energy than the energy of a photon in the laser radiation.

REFERENCES:
patent: 3790902 (1974-02-01), Miller
patent: 3902133 (1975-08-01), Watts
patent: 3978426 (1976-08-01), Logan et al.
patent: 3982207 (1976-09-01), Dingle et al.
patent: 3993963 (1976-11-01), Logan et al.
patent: 4054363 (1977-10-01), Suematsu
patent: 4371966 (1983-02-01), Scifres et al.
patent: 4461007 (1984-07-01), Burnham et al.
F. Koyama et al., "Suppression at Intensity Fluctuation of a Longitudinal Mode in Directly Modulated GaInAsP/InP Dynamic Single Mode Laser", Elect. Lett. 28 Apr. '83, vol. 19, #19, 325-327.
Y. Tohmori et al., "Wavelength Tuning . . . ", Elet. Lett. 18 Aug. '83, vol. 19, No. 17, pp. 656-657.
T. Tanbun-EK et al., "Static Characteristics of 1.5-1.6 .mu.m GaInAsP/InP Buried Heterostructure Butt-Jointed Built-In Integrated Lasers", IEEE Journal of Quantum Electronics, QE-20, Feb. 1984, No. 2, pp. 131-140.
"An AlGaAs Window Structure Laser", by H. O. Yonezu, M. Ueno, T. Kamesjima and I. Hayashi, IEEE J. of Quantum Electronics, vol. QE-15, No. 8, Aug. 1979, pp. 775-781.
"The CW Electro-Optical Properties of (Al,Ga) As Modified-Strip Buried-Heterostructure Lasers", by R. L. Hartman, R. A. Logan, L. A. Koszi and W. T. Tsang, J. Appl. Phy., vol. 51, No. 4, Apr. 1980, pp. 1909-1918.
"Distributed Feedback InGaAsp/InP Lasers With Window Region Emitting at 1.5 Micron Range", by S. Akiba, K. Utaka, K. Sakai and Y. Matsushima, IEEE J. Quantum Electronics, vol. QE-19, No. 6, Jun. 1983, pp. 1052-1056.
"Oscillation Frequency Shift Suppression of Semiconductor Lasers Coupled to External Cavity", T. Fujita, J. Ohya, S. Ishizuka, K. Fujito, H. Sato, Electronic Letters, vol. 20, No. 10, 10 May 1984, pp. 416-417.
"Characteristics of Single-Longitudinal-Mode Selection in Short-Coupled-Cavity (SCC) Injection Lasers", C. Lin, C. A. Burrus, Jr., L. A. Coldren, J. of Lightwave Technology, vol. LT-2, No. 4, Aug. 1984, pp. 544-549.
O. S. A. Meeting on Optical Fibers Communication--Jan. 23-25, 1984, Technical Digest OFC '84, Paper MF2, pp. 14-16.

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