Low noise Ge-JFETs

Details Low noise Ge-JFETs Low noise Ge-JFETs

1998-01-23

1999-05-25

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257272, 257285, 257616, H01L 29267, H01L 2912

Patent

active

059071680

ABSTRACT:
A Germanium junction field effect transistor (Ge-JFET) is fabricated in a manner to produce low noise and which is particularly suitable for a cryogenic detector. The Ge-JFET in accordance with the present invention comprises a germanium base material on which a phosphorous implanted channel region is implanted thereon. A boron cap layer overlies the channel region. On the cap layer are separately spaced drain and source ohmic contact regions, and a gate ohmic contact region therebetween. The drain and source ohmic contact regions are separately spaced arsenic implant regions and a phosphorous implant region. The gate ohmic contact region is a BF.sub.2 implanted region.

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