Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-10-07
1995-10-10
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257459, 257607, 257655, 437 3, H01L 2714, H01L 3100
Patent
active
054573378
ABSTRACT:
The photo-sensitive detector region of conventional Impurity Band Conduction (IBC) detector (also known as a Blocked Impurity Band [BIB] detector) is divided into a wide detection (or collection) region and a narrow gain region by means of tailoring the doping profile. The narrow gain region is that portion of the photo-sensitive detector region closest to the blocking layer, where the electric field is the largest, whose As concentration is made smaller (in the range of 2 to 5.times.10.sup.17 cm.sup.-3) to increase the impact ionization coefficient by decreasing the electron scattering. The wide detection region is that portion of the photo-sensitive detector region furthest from the blocking layer, where the electric field is smallest and the As concentration is larger (in the range of 5 to 8.times.10.sup.17 cm.sup.-3) to decrease the impact ionization coefficient by increasing the electron scattering.
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Baron Robert
Peterson William R.
Pham Le T.
Sheppard John P.
Denson-Low Wanda
Duraiswamy V. D.
Hughes Aircraft Company
Ngo Ngan V.
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