Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1993-06-30
1994-11-15
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330295, H03F 360
Patent
active
053651979
ABSTRACT:
In one form of the invention, an amplifier is disclosed, the amplifier comprising: an input transmission line 32; an output transmission line 36,38; at least two active devices 134 distributed between the two transmission lines; a termination 50 connected to an end of the input transmission line 32, the termination 50 comprising a terminating transistor 52 having a first gate terminal 150, a drain terminal 151, and a source terminal 152. wherein the first gate terminal 150 is connected to the input transmission line 32 and the drain terminal 151 is coupled to the first gate terminal 150 through a resistor 58 and a capacitor 56. The termination 50 is preferably characterized by a noise temperature of less than 300.degree. K.
REFERENCES:
patent: 4733193 (1988-03-01), Tserng et al.
Colin S. Aitchison, "The Intrinsic Noise Figure of the MESFET Distributed Amplifier", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-33, No. 6, Jun. 1985, pp. 460-466.
Kark B. Niclas, "Active Matching with Common-Gate MESFET's", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-33, No. 6, Jun. 1985, pp. 492-499.
Robert L. Forward and Terry C. Cisco, "Electronically Cold Microwave Artifical Resistors", IEEE Transactions on Microwave Theory and Techniques, vol. 31. No. 1, Jan. 1983, pp. 45-50.
Donaldson Richard L.
Kesterson James C.
Mottola Steven
Skrehot Michael K.
Texas Instruments Incorporated
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