Low-noise CMOS active pixel

Details Low-noise CMOS active pixel Low-noise CMOS active pixel

2006-10-24

2006-10-24

Ye, Lin (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S308000

Reexamination Certificate

active

07126636

ABSTRACT:
A low-noise CMOS active pixel for image sensors comprises a photosensitive element (PD), a feedback capacitive element (CF) with a capacitance CF, and four transistors, namely a first transistor (M1), two reset transistors (M3, M4) and one pixel selection transistor (M2). These components are laid out and controlled in such a way that the first transistor (M1) is mounted as an amplifier during the pixel reset phase and as a follower during the read phase. The reset transistors (M3, M4) are parallel-connected so that one of them (M4) compensates for the negative effects of the other transistor (M3) on the node common to the two transistors.

REFERENCES:
patent: 5705807 (1998-01-01), Throngnumchai et al.
patent: 5777675 (1998-07-01), Miida et al.
patent: 6498332 (2002-12-01), Funakoshi
patent: 6664530 (2003-12-01), Simony
patent: 2002/0066848 (2002-06-01), Fowler
patent: WO01/22727 (2001-03-01), None
Preliminary Search Report for French Patent Appl. No. 02 06068 dated Jan. 2, 2003.

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